Efficiency enhancement and transient photocapacitance characteristics of the silicon solar cell by graphene oxide

Abstract

Thin buffer layer of graphene oxide was introduced to improve the efficiency of the silicon based solar cell. The current-voltage characteristics of the solar cell was studied and observed that the device with graphene oxide as buffer layer has improved device characteristics. The efficiency of the silicon solar cell and without and with graphene oxide was observed to be 21.46% and 22.29%, respectively. The transient photoconductance and photocapacitance of the device was studied. It was observed that the photocurrent increases with illumination and reach back to original value after turning off the illumination. The transient photocapacitance measurement shows the presence of negative capacitance. The results indicate the potential of graphene oxide as buffer layer in production of the improved silicon solar cells.