The negative capacitance characteristics of in Au/n-GaAs metal-semiconductor contacts at room temperature

Abstract

In this study, we investigated negative capacitance effect in Au/n-type GaAS metal semiconductor contacts using capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics at room temperature. The negative capacitance observed only under forward voltages in structures that employ a Schottky contact. Experimental results proved that the negative capacitance behavior is always accompanied bias voltage especially in the accumulation region. Thus, the value of capacitance in the forward bias region reaches to maximum and then becomes negative. The carrier concentration obtained from the C–V characteristics is found to be of the order 10¹⁷/cm³. Furthermore, the series resistance-voltage (R_S–V) and interface states densities (E_SS) characteristics were calculated as dependence to voltage from the capacitance and conductance measurements.