On comparison of the main electrical properties of Cr/n-type Si and Re/n-type Si metal semiconductor structures

Abstract

In our study, the ideality factors, barrier heights and series resistances with main electrical properties of Cr/n-type Si and Re/n-type Si metal semiconductor (MS) structures have been investigated using current-voltage (I-V) measurements. Using forward bias I–V measurements, selected electrical parameters of these MS were obtained and compared at room temperature. The main electrical such as ideality factor (n) and barrier height (F_b) of Cr/n-Si and Re/n-Si structures were found as 1.406 and 1.404, and 0.629 eV and 0.696 eV, respectively. Furthermore, ideality factor (n), barrier height (Φ_b) and series resistance (R_S) values were calculated by using Cheung’s functions and compared by each other. It was concluded that the main electrical parameters obtained from Cr/n-type Si and Re//n-type Si MS structures are in close agreement with each other.