Analysis of the current-voltage (I-V) characteristics of MIS device as a function of gamma irradiation

Abstract

The effects of gamma radiation on the current-voltage (I-V) characteristics of Au/Si3N4/n-Si (MIS) device were investigated, and the radiation effects discussed in detail. The MIS device was exposed to different irradiation doses, ranging from 0 to 100 kGy. The reverse and forward bias I-V curves showed a decrease in current with the increasing radiation dose. The values of ideality factor (n), barrier height (ΦB0) and the reverse saturation current (Io) for each irradiation dose were obtained from the forward bias I-V characteristics. The ideality factor and saturation current decreases, while the barrier height increases with increase in the radiation dose. Moreover, the value of series resistance (Rs) calculated from Cheung’s functions increases with increase in the radiation dose.