Dielectric Characteristics of Bi doped ZnO Thin Film in Al/(Bi:ZnO)/p-Si/Au (MIS) Structures
Abstract
Thin films are fundamentals of modern electronic and optoelectronic devices and modern technologies. Various characterization techniques are proposed to characterize electrical and dielectric properties of thin films. These techniques are essential techniques to understand and illustrate the intrinsic characteristics of multi-layered structures and thin films. To be able to produce materials with advanced characteristics it is important to know and characterize such characteristics. Metal-insulator semiconductors (MIS) structures can be applied many optic and optoelectronic applications such as solar cells, photodiodes, photodetectors, etc. In the production process of such materials, doping or co-deposition is one of the most favourable methods. In this work, Zn thin films were doped with Bi at a rate of 5 %. As result product, Al/(Bi:ZnO)/p-Si/Au (MIS) type structures or Schottky diodes (SDs) were produced. In the previous works of our group investigated various electrical properties of MIS structures. In this work, ε'-V (real), ε''-V (imaginary) parts of dielectric characteristics, C-V, G/ꞷ-V, and Cole/Cole plots, and electric modulus were investigated. Frequency related dielectric characteristics were assessed. Using such data, intrinsic characteristics of Al/(Bi:ZnO)/p-Si/Au SDs were evaluated. The obtained value of ε' (~9) even at 10kHz is considerable higher than the maximum value of traditional SiO2, so they can more storage electrons or energy.
