The analysis of capacitance-conductance-voltage (C-G-V) characteristics of organic semiconductor diode with pyrene-imine

Abstract

Pyrene-imine (dimethyl (E)-5-(((4,6-dihydropyren-1-yl)methylene)amino)isophthalate, the compound containing an pyrene-imine group) thin film was prepared on n-Si substrate with spin coating technique. Atomic force microscopy (AFM) images showed that the surface of the pyrene-imine on Si wafer was uniform. In the present work, Au/ Pyrene-imine/n-Si/In Schottky diode were fabricated and capacitance/conductance characteristics were studied in the frequency range from 100 kHz to 1 MHz at dark and room temperature. The values of conductance and capacitance strongly depend on the frequency and voltage. The studied parameters such as series resistance ( ) and interface state density ( ) were obtained by the capacitance-conductance–voltage (C-G-V) measurements. The  values of the studied diode were obtained as 816Ω for 100 kHz, 479Ω for 300 kHz, 336Ω for 500 kHz and 173 Ω for 1 MHz. The  values of the studied diode were obtained as 2.08 x 10¹¹ cm^-2 eV^-1 for 100 kHz, 1.56 x 10¹¹ cm^-2 eV^-1 for 300 kHz, 1.52 x 10¹¹ cm^-2 eV^-1 for 500 kHz and 8.16 x 10¹⁰ cm^-2 eV^-1 for 1 MHz. As a results, the Au/Pyrene-imine/n-Si/In Schottky diode can be utilized in capacitance applications in industry.