Electrical and photovoltaic properties of Al/p-Si structures with PTCDA interlayer in darkness and daylight
Abstract
This article summarizes the changes in the electrical and photovoltaic characteristics of the Al/p-Si structures with PTCDA interlayer under darkness and daylight. The values of basic electrical characteristics such as ideality factor (n), barrier height (Fbo), rectification ratio (RR) and saturation current (I0) obtained from current-voltage (I-V) measurements at room temperature (300 K). Furthermore, the photovoltaic characteristics such as open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), and maximum power (P) were acquired as 0.09 V, 4.85×10−8 A, 0.427 or 42.7 %, 1.86x10-9 W under daylight light intensity, respectively. The experimental results show that the Al/PTCDA/p-type Si semiconductor structure shows photovoltaic behavior even in daylight. The experimental results suggests that Al/PTCDA/p-type Si semiconductor structure can increase efficiency in electronic devices, and also can be employed as a photodiode.
