Analysis of current-voltage characteristics of Zn/p-Si (100) Schottky contacts in the temperature range of 290-390 K
Abstract
The current-voltage (I-V) characteristics of inhomogeneous Zn/p-Si Schottky contacts determined in the temperature range 290-390 K. The electronic properties were investigated recording in current-voltage characteristics. The current-voltage characteristics of a Schottky contacts containing barrier inhomogeneities have been used thermionic emission-diffusion theory and assuming a Gaussian distribution of barrier heights. It is shown that the occurrence of a Gaussian distribution of then barrier heights is responsible for the decrease of the apparent barrier height Φb, increase ideality factor n and linearity in the activation energy plot at high linearity. Φb versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the barrier heights, and values of Φbo =1.51 eV and so = 0.201 V for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. Thus, a modified versus 1/T plot gives Φbo (T=0) and A* as 1.51 eV and 32.61 A cm-2 K-2, respectively.
