On the temperature dependent reverse current conduction mechanisms in (AuZn)/TiO2/p-GaAs MIS structures

Abstract

In this study, reverse bias current conductance mechanisms of (AuZn)/TiO₂/p-GaAs metal-insulator-semiconductor (MIS) structures were investigated in the temperature range of 80-290 K. In this temperature range, the leakage current was dominated by Schottky emission and Fowler-Nordheim tunneling in the low and moderate field region, respectively. The analysis of the reverse current-voltage characteristics underlines that the main process in leakage current flow is the carrier injection through a barrier at the material electrode interface.