Infrared Sensing Properties of Quaternary Cu2CoSnS4 Photodetectors

Abstract

Quaternary functional semiconductor photodiodes were prepared in Al/p-Si/Cu₂CoSnS₄/Al structure. Sol-gel method was used in production process of photodiodes. SEM was used in the surface characterization of the photodiodes. Surface investigations revealed that photodiodes were formed in granulated structure. Infrared sensing properties of the photodiodes were assessed. Current – voltage (I – V) and current – time (I - t) properties indicate that photodiodes response to infrared light. Linear dynamic rate, barrier height, ideality factor, photoresponse, photosensitivity characteristics of the Si/Cu₂CoSnS₄/Al photodiodes were assessed using thermionic emission theory. Calculated barrier height was found to be 0.475 eV for the infrared illumination. Ideality factor of the Al/p-Si/Cu₂CoSnS₄/Al photodiodes were calculated as 3.97. Different photocurrent was obtained for different illumination intensities. Photosensitivity and photoresponse properties of the Al/p-Si/Cu₂CoSnS₄/Al photodiodes were assessed. Results indicate that photodiodes response to the infrared light and have sensing properties.