A New Approximation On The Well-Known Interfacial State Density Of Schottky Diodes With Contacted Interfaces Of Different Materials

Abstract

By modifying the interface of the diode with the composition of [Alumina] and [Alumina + GO] (PdNi/Al₂O₃%75+GO%25/n-Si/AlMn), three Schottky diodes were produced along with the reference diode. Some electrical properties at room temperature have been investigated. The basic electrical parameters of the diodes were calculated by applying forward and reverse bias in the dark. The effect of different interface materials on the interfacial state density of diodes was studied. New N_ss graphs were obtained by adding the Schottky barrier lowering value to the traditional interface state density equation. Thus, a new N_SS perspective has been brought to the literature.