A Comparison of daylight and dark characteristics parameters of Au/n-type GaAs Schottky barrier diodes

Abstract

This work measures the current-voltage (I-V) properties of the Au/n-GaAs/Au Schottky barrier diode in both daylight and dark conditions. The measured current-voltage characteristics show good diode behavior with a high rectification ratio. The values of the rectifying ratio (RR), ideality factor (n) and barrier height () were obtained as 1098, 1.230, and 0.672 eV for dark and 1652, 1.167, and 0.688 eV for daylight, respectively. According to Ohm’s law, the values of series resistance () and shunt resistance () were found as 1.94 Ω, and 643 Ω for dark and 1.11 Ω, and 837 Ω for daylight, respectively. Additionally, by accounting for the bias dependency of the effective barrier height, the forward bias I–V characteristics were used to derive the energy distribution of the interface state density. The findings demonstrate that there is a thin interfacial layer between the semiconductor and the metal.