The Photosensitive Properties of a new Photodiode consisting Thin Film CuAlMnNi Shape Memory Alloy Layer Contact

Abstract

This work is based on fabrication and photoelectrical characterization of a new Schottky type metal-semiconductor photodiode including the thin film CuAlMnNi shape memory alloy layer that was coated as contact metal on n-Si wafer by thermal evaporation method. The photoelectrical current-voltage (I-V), current-time (I-t) and frequency based capacitance-voltage C-V signalization tests in darkness and varied artificially illuminated conditions were performed to find out the photoconductive, photovoltaic, photoresponsive  and capacitive features. The forward bias I-V plots under dark and maximum illumination power were analysed by space charge current conduction analysis. The ideality factor and rectifying values of the photodiode was found increasing by the applied light. The photodiode with alloy film contact layer exhibited good photodiode figure of merits such as a maximum responsivity value of 46.5 mA/W, a remarkably high photosensitivity (%PS) value of 19330.29, and a huge specific detectivity value of 3.33×10¹⁰ Jones. These performance values imply that the new photodiode including thin film smart alloy layer can be useful in optoelectronic, sensor, and photodetector application fields.